Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 6
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- Pages.708-714
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Subthreshold characteristics of buried-channel pMOSFET device
매몰채널 pMOSFET소자의 서브쓰레쉬홀드 특성 고찰
Abstract
We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose(
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