keV SURFACE MODIFICATION AND THIN FILM GROWTH

  • Koh, Seok-Keun (Korea Institute of Science and Technology) ;
  • Choi, Won-Kook (Division of Ceramics, Korea Institute of Science and Technology) ;
  • Youn, Young-Soo (Division of Ceramics, Korea Institute of Science and Technology) ;
  • Song, Seok-Kyun (Division of Ceramics, Korea Institute of Science and Technology) ;
  • Cho, Jun-Sik (Division of Ceramics, Korea Institute of Science and Technology) ;
  • Kim, Ki-Hwan (Division of Ceramics, Korea Institute of Science and Technology) ;
  • Jung, Hyung-Jin (Division of Ceramics, Korea Institute of Science and Technology)
  • Published : 1995.06.01

Abstract

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

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