Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 9
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- Pages.121-127
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- 1995
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- 1016-135X(pISSN)
TEM Study on the HgCdTe/Anodic oxide/ZnS Interfaces
투과전자현미경에 의한 HgCdTe/양극산화막/ZnS 계면 특성에 관한 연구
Abstract
We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H
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