전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권12호
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- Pages.115-121
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- 1995
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- 1016-135X(pISSN)
SiN 멤브레인과 WTi 흡수체를 이용한 X-선 노광용 마스크 제작
Fabrication of a mask for X-ray lithography Using SiN membrane and WTi Absorber
초록
A mask for x-ray lithography is fabricated with SiN membrane and WTi absorber. SiN membrane is deposited by plasma enhanced chemical vapor deposition, and the stress of SiN membrane is controlled to be less than 100 MPa by rapid thermal annealing. WTi absorber is reactively deposited by DC-magnetron type sputter, and the working gases are argon and nitrogen. Added nitrogen is contributed to the stress of WTi absorber. The stress of WTi absorber is controlled to be less than
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