Detection of Stuck-Open Faults in BiCMOS Circuits using Gate Level Transition Faults

게이트 레벨 천이고장을 이용한 BiCMOS 회로의 Stuck-Open 고장 검출

  • 신재흥 (한양대학교 전자공학과) ;
  • 임인칠 (한양대학교 전자공학과)
  • Published : 1995.12.01

Abstract

BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

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