Analysis of the Three-Dimentional Effects on the Breakdown Voltage in Non-reachthrough Planar Junctions

Non-reachthrough 평면 접합의 항복전압에 대한 3 차원 효과의 해석

The three-dimentional effects on the breakdown voltage of non-reachthrough planar junctions which have the finite lateral radius of window curvature are analytically investigated. The critical electric fields at breakdown and the breakdown voltages are expressed successfully in a form which is normalized to the parallel plane case. The analytical results are in excellent agreement with the published results of experiment and the quasi-three-dimensional device simulation by MEDICI for non-reachthrough plane junctions having different background doping and junction depth. The results may be applicable to the estimations of breakdown voltages in many practical power devices.