Fabrication and characteristics of AlGaAs/GaAs SABM HBTs

AlgaAs/GaAs SABM HBT의 제작 및 특성

  • 이준우 (포항공과대학교 전자전기공학과) ;
  • 김영식 (포항공과대학교 전자전기공학과) ;
  • 서아람 (포항공과대학교 전자전기공학과) ;
  • 서영석 (포항공과대학교 전자전기공학과) ;
  • 신진호 (포항공과대학교 전자전기공학과) ;
  • 김범만 (산업과학기술연구소 전자전기분야)
  • Published : 1995.01.01

Abstract

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

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