Design of HALL effect integrated circuit with reduced wolgate offset in silicon bipolar technology

옵셋전압을 저감시킨 실리콘 바이폴라 홀 IC 설계

The offset voltage in silicon Hall plates is mainly caused by stress and strain in package, and by alignment in process. The offset voltage is appeared random for condition change with time in the factory, is non-linearly changed with temperature. In this paper proposed new method of design of Hall IC, and methematicaly proved relation layout of chip of 90$^{\circ}$-shift-current Hall plate pair is matched with "Differentail to single ended Conversion amplifier." In the experiment, the offset voltage is reduced about 1/100 time than the original offset voltage.