전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권1호
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- Pages.179-184
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- 1995
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- 1016-135X(pISSN)
실리콘 박막에서 이온 질량 도핑에 의해 주입된 인의 전기적 활성화에 관한 연구
A study on the electrical activation of ion mass doped phosphorous on silicon films
초록
Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500
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