0.25um T-gate MESFET fabrication by using the size reduction of pattern in image reversal process

형상반전공정의 패턴형성시 선폭감소를 이용한 0.25um T-gate MESFET의 제작

In this study, very fine photoresist pattern was examined using the image reversal process. And very fine photoriesist pattern (less than 0.2um) was obtsined by optimizing the exposure and reversal baking condition of photoresist. The produced pattern does not show the loss of thickness, and has a sparp negative edge profile. also, the ion implanted 0.25um T-shaped gate MESFET was fabricated using this resist pattern and the directional evaporation of gate metal. The fabricated MESFET has the maximum transconductance of 302 mS/mm, and the threshold voltage of -1.8V, and the drain saturation current of this MESFET was 191 mA/mm.