Polysilicon-emitter, self-aligned SiGe base HBT using solid source molecular beam epitaxy

고상원 분자선 단결정 성장법을 이용한 다결정 실리콘 에미터, 자기정렬 실리콘 게르마늄 이종접합 쌍극자 트랜지스터

  • 이수민 (한국전자통신연구소 반도체연구단) ;
  • 염병렬 (한국전자통신연구소 반도체연구단) ;
  • 조덕호 (한국전자통신연구소 반도체연구단) ;
  • 한태현 (한국전자통신연구소 반도체연구단) ;
  • 이성현 (한국전자통신연구소 반도체연구단) ;
  • 강진영 (한국전자통신연구소 반도체연구단) ;
  • 강상원 (한국과학기술연구원 전자재료공학과)
  • Published : 1995.02.01

Abstract

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

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