Modeling of the Minimum nNise Figure and the Optimum Source Impedance of FETs using the Steady-state Nyquist Theorem for Multi-Terminal Semiconductor Devices

다단자 반도체 소자에서의 steady-state Nyquist 정리를 이용한 FET의 회소 잡음 지수 및 최적 소오스 임피던스 모델링

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.