Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A super low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs fabricated by the improved T-Gate

개선된 T-gate기술로 제작한 초저잡음 AlGaAs/InGaAs/GaAs pseudomorphic HEMT 소자의 특성

  • 이진희 (한국전자통신연구소 반도체연구단) ;
  • 윤형섭 (한국전자통신연구소 반도체연구단) ;
  • 최상수 (한국전자통신연구소 반도체연구단) ;
  • 박철순 (한국전자통신연구소 반도체연구단) ;
  • 박형무 (한국전자통신연구소 반도체연구단)
  • Published : 1995.03.01
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Abstract

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.

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