Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 3
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- Pages.134-142
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- 1995
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- 1016-135X(pISSN)
Condition and New Testing Method of Interfacial Oxide Films in Directly Bonded Silicon Wafer Pairs
직접 접합된 실리콘 기판쌍에 있어서 계면 산화막의 상태와 이의 새로운 평가 방법
Abstract
We discovered that each distinct shape of the roof-shaped peaks of (111) facets, which are generated on (110) cross-section of the directly bonded (100) silicon wafer pairs after KOH etching, can be mapped to one of three conditions of the interfacial oxide existing at the bonding interface as follows. That is, thick solid line can be mapped to stabilization, thin solid line to disintegration, and thin broken line to spheroidization. also we confirmed that most of the interfacial oxides of a well-aligned wafer pairs were disintegrated and spheroidized through high-temperature annealing process above 900
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