Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of 1.3$\mu$m InGaAsP/InP uncooled-LD using low pressure MOVPE

저압 유기금속 기상화학증착법에 의한 1.3$\mu$m InGaAsP/InP uncooled-LD의 제작

  • 조호성 (한국전자통신연구소 화합물반도체 연구부) ;
  • 김정수 (한국전자통신연구소 화합물반도체 연구부) ;
  • 이중기 (한국전자통신연구소 화합물반도체 연구부) ;
  • 장동훈 (한국전자통신연구소 화합물반도체 연구부) ;
  • 박경현 (한국전자통신연구소 화합물반도체 연구부) ;
  • 이승원 (한국전자통신연구소 화합물반도체 연구부) ;
  • 박기성 (한국전자통신연구소 화합물반도체 연구부) ;
  • 김홍만 (한국전자통신연구소 화합물반도체 연구부) ;
  • 박형무 (한국전자통신연구소 화합물반도체 연구부)
  • Published : 1995.06.01
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Abstract

InGaAsP/InP uncooled LDs emitting at 1.3$\mu$m wavelength are of interest for several application of fiber-to-the-home, optical interconnection, long-haul high-bit-rate optical transmission systems, etc. The strain compensated PBH-MQW-LD employing 1.4% compressive strained well (${\lambda}=1.3{\mu}m$) and 0.7% tensile strained barrier (${\lambda}=1.12{\mu}m$) layers grown by low pressure metallicorganic vapor phase epitaxy was found to be low threshold current and stable temperature characteristics. The average threshold current of 5.6mA and average slope efficiency of 0.27mW/mA at room temperature were obtained for uncoated uncooled-LD.

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