Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 6
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- Pages.82-90
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- 1995
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- 1016-135X(pISSN)
Fabrication and Analysis of (SAW Self-Aligned Selectively Grown W-gate) MOSFETs
SAW Self-Aligned Selectively Grown W-GAte) MOSFETs (SAW (Self-Algined Selectively Grown W-Gate) MOSFETs의 제작 및 특성 분석
- Hwang, Seong-Min (Hyundai Electronics Industries Co., Ltd.) ;
- Rho, Kwang-Myoung (Hyundai Electronics Industries Co., Ltd.) ;
- Chung, Myung-Jun (Hyundai Electronics Industries Co., Ltd.) ;
- Huh, Min (Hyundai Electronics Industries Co., Ltd.) ;
- Jeong, Ha-Poong (Hyundai Electronics Industries Co., Ltd.) ;
- Suh, Jeong-Won (Hyundai Electronics Industries Co., Ltd.) ;
- Park, Chan-Kwang (Hyundai Electronics Industries Co., Ltd.) ;
- Koh, Yo-Hwan (Hyundai Electronics Industries Co., Ltd.) ;
- Lee, Dai-Hoon (Hyundai Electronics Industries Co., Ltd.)
- 황성민 (현대전자산업주식회사) ;
- 노광명 (현대전자산업주식회사) ;
- 정명준 (현대전자산업주식회사) ;
- 허민 (현대전자산업주식회사) ;
- 정하풍 (현대전자산업주식회사) ;
- 서정원 (현대전자산업주식회사) ;
- 박찬광 (현대전자산업주식회사) ;
- 고요환 (현대전자산업주식회사) ;
- 이대훈 (현대전자산업주식회사)
- Published : 1995.06.01
Abstract
We proposed SAW (Self-Algined Selectively Grown W-Gate) MOSFET structure, and strudied electrical characteristics of the fabricated SAW MOSFETs. The threshold volgate of 0.21
Keywords