Development of three-dimensional thermal oxidation process simulator and analysis the characteristics of multi-dimensional oxide growth

1 Giga급 집적회로 구현을 위한 3차원 산화 공정 시뮬레이터 개발 및 산화층 성장 특성 분석에 관한 연구

Three-dimensional simulator for thermal oxidation process is developed. The simulator is consisted by two individual module, one is analytic-model module and the other is numerical-model module. The analytic-model which uses simple complementary-error function guarantees fast calculation in prediction of multi-dimensional oxidation process. The numerical-model which is based on boundary element method (BEM), has a good accuracy and suitable for various process conditions. The results of this study show that oxide growth is retarded at the corner of hole structure and enhanced at the corner of island structure. These effects are reson of different distribution of oxidant diffusion and mask stress. The utility of models and simulator developed in this study is demonstrated by using it to predict not only traditional shape of LOCOS but also process effects in small geometry.