Analysis of thermal characteristic variations in LD arrays packaged by flip-chip solder-bump bonding technique

플립 칩 본딩으로 패키징한 레이저 다이오우드 어레이의 열적 특성 변화 분석

  • 서종화 (한국과학기술원 전기 및 전자공학과) ;
  • 정종민 (한국과학기술원 전기 및 전자공학과) ;
  • 지윤규 (이화여자대학교 전자공학과)
  • Published : 1996.03.01

Abstract

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

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