Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A study on the fabrication and its electrical characteristics of the schottky diodes on the laser anneled poly-si substrate

레이저 열처리된 다결정 실리콘 기판을 이용한 소트키 다이오드의 제작 및 그 전기적 특성에 관한 연구

  • Kim, Jae-Yeong (Dept. of Elec. Eng., Sogang Univ.) ;
  • Kang, Moon-Sang (Dept. of Elec. Eng., Sogang Univ.) ;
  • Koo, Yong-Seo (Dept. of Computer Eng., Seokyeong Univ.) ;
  • An, Chul (Dept. of Elec. Eng., Sogang Univ.)
  • 김재영 (서강대학교 전자공학과) ;
  • 강문상 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 컴퓨터공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1996.04.01
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Abstract

Schottky diodes are fabricated on laser annealed and unannealed polysilicon substrate and their electrical characteristics are studied and analyzed. Current of laser annealed devices are larger than that of unannealed devices because of grain growth, decrease of grain boundary and trap density, lowering of grain boundary barrier height, decrease of dopant segregation. At low forward bias (<0.7V), currents of unanealed devices are larger. Soft breakdown voltages of laser annealed devices are larger than that of unannealed devices.

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