Grating fabrication for DFB laser diode using holographic interferometer system

DFB 레이저 다이오드를 위한 홀로그래픽 시스템을 이용한 회절격자 제작

  • Published : 1996.06.01

Abstract

Periodic gratings for 1.55$\mu$m distributed feedback laser diode (DFB LD) have been fabricated by a holographic interference exposure system using an etalon stabilized Ar ion laser. We obtain a good development condition at developer concentration of 65% and obtain etching rate of 1000$\AA$/min at 20.deg. C by the mixed solution HBr:HNO$_{3}$:H$_{2}$O(1:1:10 in volume ratio). We obtain good first order grating with period of 2400${\AA}[\pm}2{\AA}$ at etching time of 45 sec from grating period and diffraction efficiency measurement, and SEM observation of grating fabricated on InP substrate.

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