Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Micropattern generation by holographic lithography and fabrication of quantum wire array by MOCVD

홀로그래픽 리소그래피에 의한 미세패턴 형성과 MOCVD에 의한 양자세선 어레이의 제작

  • Kim, Tae-Geun (Dept. of Electronics Engineering, Korea Univ.) ;
  • Cho, Sung-Woo (Dept. of Electronics Engineering, Korea Univ.) ;
  • Im, Hyun-Sik (Semiconductor Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, Young (Semiconductor Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, Moo-Sung (Semiconductor Materials Research Center, Korea Institute of Science and Technology) ;
  • Park, Jung-Ho (Dept. of Electronics Engineering, Korea Univ.) ;
  • Min, Suk-Ki (Semiconductor Materials Research Center, Korea Institute of Science and Technology)
  • 김태근 (고려대학교 전자공학과) ;
  • 조성우 (고려대학교 전자공학과) ;
  • 임현식 (한국과학기술연구원 반도체재료센터) ;
  • 김용 (한국과학기술연구원 반도체재료센터) ;
  • 김무성 (한국과학기술연구원 반도체재료센터) ;
  • 박정호 (고려대학교 전자공학과) ;
  • 민석기 (한국과학기술연구원 반도체재료센터)
  • Published : 1996.06.01
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Abstract

The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.

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