Optical modulation characteristics of resonant tunneling diode oscillator

빛에 의한 공명투과다이오드 진동자의 주파수 변조 특성

  • 추혜용 (한국전자통신연구소 기초기술연구부) ;
  • 이일희 (한국전자통신연구소 기초기술연구부)
  • Published : 1996.10.01

Abstract

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

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