Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect of diamond-like carbon film as passivation layer on characteristics of power transistor

전력 트랜지스터의 특성에 미치는 다이아몬드상 카본 passivation 막의 효과

  • Park, Jung-Ho (Dept. of Elec. Eng., Korea Univ.) ;
  • Lim, Dae-Soon (Dept. of Material Sci & Eng., Korea Univ.) ;
  • Jung, Suk-Koo (Dept. of Elec. Eng., Korea Univ.) ;
  • Chang, Hoon (Dept. of Elec. Eng., Korea Univ.) ;
  • Shin, Jong-Han (Dept. of Material Sci & Eng., Korea Univ.)
  • 박정호 (고려대학교 전자공학과) ;
  • 임대순 (고려대학교 재료공학과) ;
  • 정석구 (고려대학교 전자공학과) ;
  • 장훈 (고려대학교 전자공학과) ;
  • 신종한 (고려대학교 재료공학과)
  • Published : 1996.11.01
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Abstract

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

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