Al corrosion phenomena on the Al grain boundary after AlCu plasma etching

AlCu 플라즈마 식각후 Al 결정입계에서 Al 부식현상

  • 김창일 (안양대학교 전기공학과) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 윤선진 (한국전자통신연구소 반도체연구단) ;
  • 김상기 (한국전자통신연구소 반도체연구단) ;
  • 백규하 (한국전자통신연구소 반도체연구단) ;
  • 남기수 (한국전자통신연구소 반도체연구단)
  • Published : 1996.12.01


Cl-based gas chemistry is generally used to etching for al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with H$_{2}$O due to air exposure and results in Al corrosion. In this study, the corrosion phenomena of Al wer examined with XPS(X-ray photoelectron spectroscopy) and SEM (scanning electorn microscopy). It was confirmed that chlorine mainly existed at the grian boundary of Al alloy after plasma etching of Al alloy with cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al alloy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.