A novel in-situ vacuu encapsulted lateral field emitter triode

자체적으로 진공을 갖는 수평형 전계 방출 트라이오드

  • 임무섭 (서울대학교 전기공학부) ;
  • 박철민 (서울대학교 전기공학부) ;
  • 한민구 (서울대학교 전기공학부) ;
  • 최연익 (아주대학교 전기전자공학부)
  • Published : 1996.12.01


A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.