Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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The optimum design of InGaAsP/InP RWG MQW-LD

InGaAsP/InP RWG MQW-LD의 최적 설계

  • 하홍춘 (한국해양대학교 전자통신공학과) ;
  • 오수환 (한국해양대학교 전자통신공학과) ;
  • 이석정 (한국해양대학교 전자통신공학과) ;
  • 박윤호 (한국해양대학교 전자통신공학과) ;
  • 오종환 (한국해양대학교 전자통신공학과) ;
  • 홍창희 (한국해양대학교 전자통신공학과)
  • Published : 1996.12.01
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Abstract

Recently interest in the fabrication of LD operated by low current is gradually increasing as fabrication techniques of MQW-LD are progressed. In this viewpoint, theoretical estimation for decreasing the amount of threshold current will be helpful to design and make LD in case that active layer of conventional bulk type RWG-LD structure is replaced with MQW structure. Therefore, the optimum design condition of RWG MQW-LD was obtained from theoretical analysis in order to operate in the weakly index-guided LD and low threshold current. The lateral effective index step has been obtained in RWG MQW-LD structure. Waveguide mechanism including this index step has been investigated by solving the carrier diffusion equation and lateral wave equation. From these theoretical results, the optimum design condition of RWG MQW-LD have been suggested.

본 연구에서는 InGaAsP/InP RWG MQW-LD를 제작하기 앞서 이론해석으로부터 RWG MQW-LD의 도파로규격에 따른 측방향 유효굴절율차와 index-guided LD로 동작하는 임계 유효굴절율차의 값, 그리고 이러한 굴절율차에 따른 측방향에서의 단일모드 발진조건과 임계전류를 최소로 하기 위한 ridge 폭을 구하여 도파로를 설계하였다. 이론해석으로 부터는 순수한 index-guided LD로 동작하기 위한 측방향 임계 유효굴절율차 값은 일반적인 bulk층 보다는 약 2배 정도 큰 값인 약 0.015이었으며 도파로 설계에 있어서는 유효굴절율차가 0.015이며 측방향단일모드로 동작하기 위해서는 ridge 폭은 약 4.mu.m이하가 되어야 함을 알 수 있었다. 그리고 이때 임계전류값이 최소가 됨을 지적하였다.

Keywords

References

  1. J. Appl. Phys. v.45 GaAs-GaAlAs buried-heterostructure injection lasers T. Tsukada
  2. Appl. Phys. Lett. v.30 Room-temperature CW operation of buried stripe double heterostructure GaInAsP/InP diode lasers J. J. Hsieh;C. C. Shen
  3. Japan J. Appl. Phys. v.19 Accelerated aging characteristics of InGaAsP/InP buried heterostructure lasers emmitting at 1.3 μm K. Mizuishi;M. Hirao;S. Tsuji, et al.
  4. Japan J. Appl. Phys. v.19 1.6 μm wavelength buried heterostructure GaInAsP/InP lasers Y. Itaya;T. Tanbun-ek;K. Kishino, et al.
  5. Electron. Lett. v.17 Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm wavelength I. P. Kaminow;R. E. Nahory;L. W. Stulz;J. C. Dewinter
  6. IEEE Quantum Electron. v.QE19 Low threshold InGaAsP ridge waveguide lasers at 1.3 μm I. P. Kaminow;L. W. Stulz;J. S. Ko;A. Dental;R. E. Nahory;J. C. Dewinter;R. L. Hartman
  7. Appl. Phys. Lett. v.48 Narrow-stripe metal-clad ridge waveguide lasers for 1.3 μm waveledgth M. C. Amann;B. Stenmuller
  8. 한국물리학회지 응용물리 v.3 no.2 III-V 화학물반도체 단결정 성장을 위한 수직형 LPE장치의 제작 오종환;조호성;홍창희
  9. 한국항해학회지 v.14 no.2 수직형 LPE에 의한 InGaAsP(1.3 μm)/InP 다층박막 결정성장 홍창희;조호성;오종환;김경식;김재창
  10. 한국광학회지 v.3 no.4 액상결정성장에 의한 InGaAsP/InP MQW LD 제작에 관한 연구 조호성;홍창희;오종환;예병덕;이중기
  11. 대한전자공학회 v.31 no.10 LPE방법으로 제작된 InGaAsP/InP MQW LD의 광학적 특성 조사 조호성;박윤호;홍창희
  12. IEEE J. Quantum Electron. v.QE22 no.9 Gain and threshold of three-dimensional quantum-box lasers M. Asada;Y. Miyamoto;Y. Suematsu
  13. Physics of Semiconductor Laser Devices G. H. B. Thompson
  14. IEEE J. Quantum Electron. v.QE11 $Al_xGa_{1-x}As$ double heterostructure rib waveguide injection laser T. P. Lee;C. A. Burrus;B. I. Miller;R. A. Logan
  15. J. Appl. Phys. v.42 Theory of transverse cavity mode selection in homojuction and hetrojunction semiconductor laser J. K. Butler
  16. Optics Comm. v.76 Effective index models for MQW waveguides R. A. Sammut;I. M. Skinner
  17. Long-Wavelength Semiconductor lasers G. P. Agrawal;N. K. Dutta
  18. Trans. IECE of Japan v.E68 no.8 Theoretical Linewidth enhancement factor a of GaInAsP/InP lasers M. Asada
  19. IEEE J. Quantum electron. v.QE13 Transverse model control in an injection laser by a strip loaded waveguide H. Kawaguchi;T. Kawakami
  20. J. Lightwave Tech. v.LT2 Lateral analysis of quasi-index-guided injection lasers: transition from gain to index guiding G. P. Agrawal
  21. IEEE J. Quantum Electron. v.QE17 A self-consistent static model of the double hetrostructure D. P. Wilt;A. Yariv
  22. J. Appl. Phys. v.51 Carrier transport in double-hetero-structure active layers W. B. Joyce
  23. Appl. Phys. Lett., and other reference cited therein v.43 Beam-propagation analysis of stripegeometry semiconductor laser: Threshold behavior G. P. Agrawal;W. B. Joyce;R. W. Dixon;M. Lax
  24. Solid state electronic devices B. G. Streetman
  25. Solid State Phyics N. W. Ashcroft;N. D. Mermin
  26. Physical Properties of Semiconductor C. M. Wolfe;N. Holonyak;G. E. Stillman
  27. Solid State Electronic Devices Ben G. Strretman
  28. IEEE Proc. v.133 no.6 Threshold current analysis of InSaAsP-InP ridge-waveguide lasers M. C. Amann;B. Stegmller