Deposition properties of $Al_{2}O_{3}$ thin films by LP-MOCVD

LP-MOCVD로 제조한 알루미나 박막의 증착 특성

  • 김종국 (경북대학교 무기재료공학과) ;
  • 박병옥 (경북대학교 무기재료공학과) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 1996.08.01

Abstract

Al2O3 thin films were deposited on Si-wafer (100) using organo-aluminum compounds at low pressure by chemical vapor deposition (CVD) method. The vapor of the organo-metallic precursor was carried by pure N2 gas. The deposition rate increased and then saturated as Tsub increased with increasing the AIP flow rate. The main contamination didn't found in deposited films except carbon. The H-O(H2O) IR absorption band decreased in intensity as the deposition temperature increased, and completely disappeared through annealing.

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References

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