Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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X-ray diffraction analysis of ZnS/ZnSe superlattices prepared by hot wall epitaxy

열벽적층성장에 의하여 제작된 ZnS/ZnSe 초격자의 X-선 회절분석

  • Yong Dae Choi (Department of Physics, Mokwon University, Taejon 301-729, Korea) ;
  • A. Ishida (Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu 432, Japan) ;
  • Fujiyasu, H. (Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu 432, Japan)
  • Published : 1996.08.01
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Abstract

ZnS/ZnSe superlattices were prepared on GaAs (100) substrates by hot wall epitaxy, an the structures were analyzed using x-ray diffraction. It is shown that the x-ray diffraction of the strained superlattice gives very useful information about the thickness of each layer, strain, interdiffusion, and the fluctuation of the superlattice period. Interdiffusion length of the S and Se is estimated to be less than $2\;{\AA}$.

ZnS/ZnSe 초격자가 열벽적층성장에 의하여 GaAs(100) 기판 위에 성장되었으며 그 구조가 x-선 회절에 의하여 분석되었다. 변형된 초격자의 x-선 회절은 각 층의 두께, 변형, 상호확산 그리고 초격자 주기의 변동에 대한 유용한 정보를 제공한다. S와 Se의 상호확산의 길이는 $2\;{\AA}$ 이하인 것으로 추정된다.

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