Abstract
$LiNbO_{3}$ single crystals were grown using a self-designed radio-frequency heating Czochralski crystal grower. Congruently melting composition was used and the optimum growth conditions were established. The compensated power control method was very effective to control the outer diameter of the crystal ingots within ${\pm}5\;%$. Scanning electron microscopy was performed to characterize the effect of the $Mg^{2+}$ ions on the formation of the ferroelectric domain in $LiNbO_{3}$.
자체 제작한 고주파 유도 가열 Czochralski 장치를 이용하여 조화용융조성(congruently melting composition)의 undoped 및 MgO.doped 단결정을 육성하였다. 최적육성조건을 확립하였으며, 보상가열전압조정방식을 이용하여 약 ${\pm}5\;%$ 이내의 범위로 직경제어하는데 성공하였다. 또한, 첨가된 $Mg^{2+}$ 이온이 ferroelectric domain 형성에 미치는 영향을 전자현미경(SEM)등으로 분석하였다.
