Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Surface Modification Using CVD-SiC

화학증착 탄화규소에 의한 표면 개질

  • 김한수 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 김동주 (연세대학교 세라믹공학과)
  • Published : 1996.07.01
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Abstract

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

Keywords

References

  1. Powder Metall Int. v.12 no.3;4 Review 13: Chemical Vapor Deposition of Silicon Carbide J. Schliching
  2. Materials and Design v.14 no.2 Monolith β SiC Parts Produced by CVD W.R. Haigis;M.A. Pickering
  3. Silicon Carbide a High Temperature Semiconductor J.R. O'connor;J. Smiltens
  4. J. Electrochem. Soc v.134 no.12 Growth Characteristics of CVD Beta-Silicon Carbide D.J. Cheng;W.J. Shyy;D.H. Kuo;M.H. Hon
  5. The Materials Science of Thin Films M. Ohring
  6. Thin Films Processes J.L. Vossen;W. Kern
  7. VLSI Technology S.M. Sze
  8. J. Electrochem. Soc. v.140 no.3 Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane J.M. Grow;R.A. Levy;Y.T. Shi;R.L. Pleffer
  9. J. Cryst. Growth v.128 MOCVD SiC Layer Morphology and Texture Dependence on Thickness and Pressure J. Santiso;A. Figueras;R. Rodriguez-Clemente;B. Arms;C. Combescure;A. Mazel;Y. Kihn;J. Sevely
  10. Chem. Ind. Kinectics of the Reduction of Methyltrichlorosilane by Hydrogen J.N. Burgess;T.J. Lewis
  11. Proceedings of 3rd International Symposium on Ceramic Materals and Components for Engine Kinetics of the Low-pressure Chemical Vapor Deposition of Silicon Carbide T.M. Besmann;M.L. Johnson
  12. J. Electrochem. Soc. v.138 no.3 A Model of Silicon Carbide Chemical Vapor Deposition M.D. Allendorf;R.J. Kee
  13. J. Am. Ceram. Soc. v.75 no.10 Depletion Effects of Silicon Carbide Deposition from Methyltrichlorosilane T.M. Besmann;B.W. Sheldon;T.S. Moss Ⅲ;M.D. Kaster
  14. J. Mater. Res v.9 no.1 Kinetic Study of Silicon Carbide Deposited from Methyltrichlorosilane Precusor C.Y. Tsai;S.B. Desu;C.C. Chiu
  15. J. Mater. Sci. Lett. v.10 Growth of Silicon Carbide by Chemical Vapor Deposition B.J. Choi;D.R. Kim
  16. 한국요업학회지 v.32 no.4 화학증착 탄화규소에 의한 흑연의 표면 개질 연구 -수평형 화학증착반응관에서 탄화규소 성장 특성- 김동주;최두진;김영욱;박상환
  17. J. Mater Res. v.9 no.8 Local Equilibrium Phase Diagram: SiC Deposition in a Hot Wall LPCVD Reactor C.C. Chiu;S.B. Desu;Z.J. Chen;C.Y. Tsai
  18. Proc. of International Symposium on Ceramic Components for Engine Preparation and Mechanical Properties of CVD-SiC K. Niihara;A. Suda;T. Hirai
  19. Phil. Mag. The Orientation of Vapor Deposits D. Walton
  20. Philips Res. Repts. v.22 Evolutionary Selection, A Principle Governing Growth Orientation in Vapour-deposited Layers A. van der Drift
  21. J. Mater. Sci. v.24 A model for Development of Orientation of Vapor Deposits D.N. Lee
  22. Ceramurgia International v.3 no.2 Morphology of Silicon Carbide Formed by Chemical Vapour Deposition R. Pampuch;L. Stobierski
  23. Thin Solid Films v.40 The Structure of Chemical Vapor Deposited Silicon Carbide J. Chin;P.K. Gantzel;R.G. Hudson
  24. J. Electrochem. Soc. v.137 no.11 The Effect of CH4 on CVD β-SiC Growth D.H. Kuo;D.J. Cheng;W.J. Shyy
  25. J. Appl. Phys v.31 no.7 Propagation Mechanism of Germanium Dendrites D.R. Hamilton;R.G. Seidensticker
  26. J. Mater. Sci v.27 Growth Characteristics of β-S₁C by Chemical Vapour Depostion C.H. Chu;Y.M. Lu;M.H. Hon
  27. J. Electrochem. Soc. v.118 no.4 The Role of Homogeneous Reactions in Chemical Vapor Deposition K.J. Sladek
  28. Thin Solid Films v.249 Atomic Force Microscopy Study of the Microroughness of S₁C Thin Films M. Bloum;D. Guay;M.A. El Khakam;M. Chaker;S. Boily;A. Jean