A Study on the Silicidation of Thick Co/Ti Bilayer

두꺼운 이중층 Co/Ti 막의 실리사이드화에 관한 연구

  • Published : 1996.09.01

Abstract

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

Keywords

References

  1. IEEE Trans Electron Devices v.ED-34 no.3 A self aligned CoSi₂interconnection and contact technology for VLSI application Luc van den Hove;Rob Wolters;Karen Maex
  2. J. Electrochem. Soc v.133 no.7 Self-Aligned Ti Silicide Formed by RTA T. Bart;C.M. Osburn;T. Finstad;J. Liu;B. Ellington
  3. J. Electrochem. Soc v.140 no.1 Thermal stability of thin submicrometer lines of CoSi ₂ Q.F. Wang;C.M. Osburn;P.L. Smith;C.A. Canovai;G.E. McGuire
  4. Materials Science and Engineering v.R11 K. Maex
  5. 한국재료학회지 v.4 no.1 Co/Ti 이중박막을 이용한 CoSi₂에피박막 형성에 관한 연구 김종렬;배규식;박윤백;조윤성
  6. J. Appl. Phys v.57 no.12 Metastable Phase formation in Ti-Si thin films Robert Beyers;Tobert Sinclair
  7. J. Appl. Phys v.55 no.10 Ti silicide formation:Effect of Oxygen Distribution in the Metal Film M. Berti;A.V. Drigo;C. Cohen;J. Siojka;G.G.Bentini;R. Nipoti;S. Guerri
  8. Solid-State Electron v.21 Reaction of thin metal films with SiO₂substrates R. Pretorius;J.M. Harris;M.A, Nicolet
  9. J. Appl. Phys v.57 Metastable Phases formation in Ti-Si thin films R. Beyers;R. Sinclair
  10. J. Appl. Phys v.57 no.2 Growth and Structure of TiSi₂Phases formed by thin Ti Film on Si G.G. Bentini;R. Nipoti
  11. J. Appl. Phys v.59 no.5 Variation of the nucleated products in ultra thin films of Ti-Co on Si subtrates with processing changes Hwa-yueh Yang;R.W. Bene
  12. J. Electrochem. Soc v.138 no.10 The influence of impurities on Cobalt Silicide Formation W.J. Freitas;J.W. Swart
  13. J. Electrochem. Soc v.134 no.4 Characterization of a self -aligned Co silicide process A.E. Morgan;E.K. Broadbent;M. Delfino;B. Coulman;D.K. Sadana
  14. Materials Science and Engineering v.R11 K. Maex
  15. VMIC Conference Formation of self-aligned TiN/CoSi₂bilayer form Co/Ti/Si and its application in salicide, diffusion barrier and contact fill Chih-Shih Wei;David B. Fraser;M. Lawrence;A. Dass;T. Brat
  16. J. Appl. Phys v.72 no.5 Resistance and structural stabilities of epitaxial CoSi₂films on (001)Si substrates S.L. Hsia;T.Y. Tan(et al)
  17. J. Electrochem. Soc v.143 no.3 Defect generation during epitaxial CoSi₂formation using Co/Ti bilayer on oxide patterned (100)Si substrate and its effect on the electrical properties J.S. Byun;J.M. Seon;K.S. Youn;H. Hwang;J.W. Park;J.J. Kim
  18. J. Appl. Phys v.21 C. Herring
  19. 한국재료학회지 v.3 no.1 TiSi₂박막의 열 안정성에 미치는 막스트레스의 영향 김영욱;고종우;이내인;김일권;박순오;안성태;이용문;이종길