Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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DEPOSITION OF A-SIC:H FILMS ON AN UNHEATED SI SUBSTRATE BY LOW FREQUENCY (50Hz) PLASMA Cvd

  • Shimozuma, M. (College of Medical Technology, Hokkaido University) ;
  • Ibaragi, K. (Department of Electrical Engineering, Hokkaido University) ;
  • Yoshion, M. (Hokkaido Polytechnic College) ;
  • Date, H. (Kitami Institute of Technology) ;
  • Yoshida, K. (Hokkaido Institute of Technology) ;
  • Tagashira, H. (Hokkaido Institute of Technology)
  • Published : 1996.12.01
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Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.

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