PLASMA DIAGNOSIS OF FANING TARGETS SPUTTERING SYSTEM FOR DEPOSITION OF BA FERRITE FILMS IN Ar, Xe AND $O_2$ GAS MIXTURE

  • Matsushita, Nobuhiro (Dept. of Physical Electronics, Tokyo Institute of Technology) ;
  • Noma, Kenji (Dept. of Physical Electronics, Tokyo Institute of Technology) ;
  • Nakagawa, Shigeki (Dept. of Physical Electronics, Tokyo Institute of Technology) ;
  • Naoe, Masahiko (Dept. of Physical Electronics, Tokyo Institute of Technology)
  • Published : 1996.12.01

Abstract

The diagnosis of the plasma in the facing targets sputtering system was performed in mixture gas of Ar 0.18-0.0 Pa, Xe 0.0-0.18 Pa and $O_2$ 0.02 Pa by using Langmiur's probe and the effect of plasma-damage to surface smoothness and magnetic characteristics of Ba ferrite films was clarified. The electron density $N_e$ and the electron temperature $T_e$ were evaluated at the center of the plasma and at the neighborhood of the anode ring. $T_e$ decreased and $N_e$ increased with increase of $P_{Xe}$ at the center of plasma. For the measurement at the neighborhood of the anode ring, $T_e$ was almost constant and $N_e$ took the minimum value at $P_{Xe}$ of 0.1 Pa, where Ba ferrite films with excellent c-axis orientation and magnetic characteristics were obtained. It was suggested that the restriction of the bombardment of recoiled particles as well as the suppress of plasma-damage were effective for obtaining good surface smoothness and excellent magnetic characteristics and it was useful for decreasing the crystallization temperature of Ba ferrite films.

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