ADSORPTION OF ATOMIC-HYDROGAN ON THE Si(100)-(2$\times$l)-SB SURFACE STUDIED BY TOF-ICISS/LEED

We have investigated a structural change of Si(100)-($2 \times 1$)-Sb surface caused by atomic hydrogen adsorption at room temperature using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low energy electron diffraction (LEED). We found that when atomic hydrogen adsorbs on the Si(100)-($2 \times 1$)-Sb surface, (1) the partial desorption of Sb atoms from the Si(100) surface occurs even at room temperature, (2) the rest Sb atoms are displaced from their original positions and form an almost two-dimensional layer with dispersive distribution of Sb atoms, and (3) the structural transformation into the Si(100)-($1 \times 1$)-H periodicity is induced by the formation of the $1 \times 1$-H dihydride phase on the Si substrate.