GaAs/AlAs/InGaAs 에피층의 고분해능 TEM 이미지 전산모사

Computer Simulations of HRTEM Images in GaAs/AlAs/InGaAs Epilayers

  • 이확주 (한국표준과학연구원 소재평가센터) ;
  • 류현 (한국표준과학연구원 소재평가센터) ;
  • 이재덕 (한국표준과학연구원 소재평가센터) ;
  • 남산 (고려대학교 공과대학 재료금속공학부)
  • Lee, Hwack-Joo (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Ryu, Hyun (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Lee, J.D. (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Nahm, Sahn (Division of Materials and Metallurgical Engineering, Korea University)
  • 발행 : 1996.12.01

초록

Thin epilayer structures of GaAs/AlAs/InGaAs, grown by Molecular Beam Epitaxy, were investigated by high resolution transmission electron microscopy, Image in the [110] zone axis was taken and compared with the calculated images. The supercell structure which contains GaAs, AlAs and InGaAs layers was designed and was employed in the image calculation with MacTempas computer program. Good agreement was shown between experimental image and a set of calculated images with varying defocus and sample thickness.

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