Mirror Surface Grinding Using Ultrafine Grit Wheel

초미립 숫돌에 의한 경면연삭

Silicon wafers are required to be finished under the roughness of nanometer order for the subsequent chip fabrication processes. Recently, the finish grinding techniques have been researched for the improvement of accuracy and surface roughness simultaneously. Among them, the grinding technique using fine abrasive has been known as an easily accessible method. However, the manufacture of the fine grit grinding wheel has been very difficult because of the coherence of the grits. In this paper, the development of the ultrafine grit silica($SiO_2$) grinding wheel by the combination of the binder coating and the vacuum forming techniques is reported. And, the mechanochemical removal effects of the grinding conditions are discussed. Finally, a successful result of Ra O.4nm. Rmax 4nm in the ground surface roughness of a 6 inch silicon wafer was achieved.