The characteristics and optimization of submicron optical mask using electromagnetic scattering effect

전자기파 산란을 이용한 Submicron 광학 MASK의 특성 및 최적화

  • Published : 1997.08.01

Abstract

Recently, in designing optical mask such as 4GDRAM, the scattering effect of electromagnetic wave must be considered. For this reason we claculated directly the mask function using the finite difference time domain(FDTD) method. The modification of image theory with this new mask function could explain clearly the scattering effect at the etched side wall of the submicron optical mask. The characteristics of the various type of alternating PSM were investigated. According to the simulation, the dual wet etch process was the most useful fabrication technique to overcoe the light scattering off at the shifted opening.

최신(4GDRAM)의 MASK design에서는 전자기파의 산란에 의한 효과를 고려해 주는 것이 매우 중요하다. 이를 위하여 시간 영역에서의 요한 차분법을 도입하여 직접 마스크 함수를 계산하였다. 새롭게 도입한 마스크 함수를 사용함으로써 마스크와 렌즈의 효과뿐만 아니라, submicron 노광용 위상 변이 마스크의 식각된 옆벽에서의 산란효과를 정확하게 설명할 수 있었다. 산란효과를 줄이기 위해 변형된 마스크의 형태에 따른 특성을 살펴보았고, dual etch back에 의한 마스크 변형이 가장 좋은 공정 여유도를 제공함을 확인하였다.

Keywords

References

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