Abstract
We have obtained the optimum thickness of anti-reflection(AR) coating on one of facets of a $\1.55mu\textrm{m}$ InGaAsP MQW FP semiconductor laser by in-site monitoring of the light emitted from the rear facet during the film deposition on the fore facet. The optimum thickness of $SiO_x$ thin film whose refractive index is 1.85 was found to be 188 nm. The reflectivity of the coated facet was calculated by the threshold current ratio of before and after AR coating, which was obtained from exprimental data, and it was about 2$\times$ $10^{-4}$. The results show that the output power is increased by 87% at bias current 60 mA, the slope efficiency is increased by 3.4 times, and the threshold current is increased by 2.64 times. By in-situ depositing of the $Si/SiO_2$ thin film HR coating on the rear facet, the output power was increased by 160% than before the AR and HR coatings, the slope efficiency was increased by 3.8 times, the threshold current was increased by 1.07 times, which is similar to the value of before AR coating. Due to the AR and HR coatings the output light power characteristics were enhanced.
$\1.55mu\textrm{m}$ InGaAsP MQW FP 반도체 레이저 단면의 무반사 코팅 두께를 앞면에 무반사 코팅하는 동안 뒷면의 출력을 실시간으로 측정하여 결정하였다. 굴절률 1.85인 $SiO_x$ 박막의 최적 두께는 188 nm이고, 무반사 코팅 전, 후의 문턱전류비로 계산한 단면의 반사율은 약 2 $\times$ $10^{-4}$이었다. 무반사 코팅 후 주입전류 60 mA일 때 출력이 87%, 기울기 효율이 3.4배, 문턱전류가 2.64배 증가하였다. 또한 실시간으로 $Si/SiO_2$ 박막의 고반사 코팅을 뒷면에 한 후 코팅 전보다 출력이 약 160% 향상되었고, 기울기 효율이 3.8배 증가하였으며, 문턱전류는 1.07배로 코팅 전과 거의 비슷하여, 무반사 및 고반사 코팅 후 반도체 레이저의 출력특성이 크게 향상되었다.
