A study on the amorphous s-i-n photodiode integrated with CMO IC

CMOS IC와 집적 가능한 비정질 p-i-n 광 수신기 제작에 관한 연구

  • Kwak, Chol-Ho (Department of electronic Engineering, Kangwon National University) ;
  • Yoo, Hoi-Jun (Department of electronic Engineering, Kangwon National University) ;
  • Jang, Jin (Department of Physics, Kyounghee University) ;
  • Moon, Byoung-Yeon (Department of Physics, Kyounghee University)
  • 곽철호 (강원대학교 전자공학과) ;
  • 유회준 (강원대학교 전자공학과) ;
  • 장진 (경희대학교 물리학과) ;
  • 문병연 (경희대학교 물리학과)
  • Published : 1997.12.01


Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.



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