Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition

금속유기 화학증착법으로 증착시킨 $RuO_2$박막의 성장에 미치는 증착온도와 산소의 영향

  • 신웅철 (충남대학교 재료공학과 전자요업연구실) ;
  • 윤순길 (충남대학교 재료공학과 전자요업연구실)
  • Published : 1997.03.01
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Abstract

RuO2 thin films were deposited on SiO2(1000$\AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{\circ}C$. RuO2 thin films deposited onto SiO2(1000$\AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$\AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

RuO2 박막은 SiO2(1000$\AA$)Si와 MgO(100) 단결정 위에 낮은 증착온도에서 hot-wall MOCVD법으로 증착시켰다. 그리고 박막의 특성에 미치는 공정변수의 영향을 고찰하였다. 25$0^{\circ}C$의 비교적 낮은 온도에서부터 RuO2의 단일상을 얻었으며 SiO2(1000$\AA$)Si위에 증착된 RuO2박막은 무질서한 배향을 보이는 반면 MgO(100)단결정 위에 증착시킨 RuO2박막의 경우에는 (hk0) 배향성을 보이는 것을 관찰하였다. 증착온도가 증가함에 따라 RuO2박막의 결정성은 증가하였고 전기적 비저항은 감소하였다. O2유량이 감소함에 따라 RuO2박막의 비저항은 감소하였으며, 증착온도 35$0^{\circ}C$, O2 유량 50sccm에서 증착된 두께 2600$\AA$-RuO2박막의 비저항은 52.7$\mu$$\Omega$-cm이었으며 이는 고 유전물질의 하부전극으로 이용하기에 적합하다.

Keywords

References

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