The Effect of the Microdefects in Czoscralski Si wafer on Thin Oxide Failures

Thin Oxide 불량에 미치는 Czochralski Si 웨이퍼의 미소결함의 영향

  • Published : 1997.07.01

Abstract

The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

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References

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