Photo-Induced Scalar Phenomena according to Thickness Dependence of Chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ Thin Film

칼코게나이트 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 두께에 따른 광유기 스칼라 현상

In this study, we investigated the thickness dependence of thermal bleaching(TB) effect as well as photo-induced scalar phenomena, such as photodrakening(PD) effect and photorefraction(PR) change, in chalcogenide A $s_{40}$ G $e_{10}$S $e_{15}$ $S_{35}$ thin films. We found that when these films were exposed for 15 minutes using blue-pass filtered Hg lamp(~4300$\AA$) after annealing for 30 minutes around the glass transition temperature Tg(20$0^{\circ}C$), the refractive index change ($\Delta$n) was varied up to 0.02~0.46 according to each thickness condition and the optical energy gap ($\Delta$ $E_{op}$ ) was shifted to a longer wavelength of approximately 0.67eV, especially for 1000$\AA$-thickness. Also, the TB PD effects have been understood by the results related to optical absorption characteristics. The TB effect could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, the PD effect could be understood as due to the enhancement of disorder since U and the slope of Urbachs tail(1/F) around an absorption edge were decreased by exposing.ing.n edge were decreased by exposing.