Growth and defects of ZnSe crystal

ZnSe 단결정 성장과 결정결함

  • Published : 1997.02.01

Abstract

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

직경 55 mm의 ZnSe 단결정을 수소분위기에서 seeded chemical vapor transport법에 의해 성장하였고, 성장 parameter들이 결정 결함에 미치는 영향을 조사하였다. Chemical etching에 의한 EPD 측정, X-ray rocking curve 측정, photolumlnescence 측정으로 성장된 단결정의 특성을 평가하였다.

Keywords