Preparation and electrical properties of thick PZT films deposited on alumina substrates with Ag-Pd electrodes and Pt plates by spin-on process

Ag-Pd/알루미나 및 Pt전극에 스핀온 방법으로 제조된 PZT후막의 전기적 특성

  • Cho, Hyun-Choon (CNRS 341, Bat.502, INSA de Lyon) ;
  • Yoo, Kwang-Soo (Department of Materials Science and Engineering, Seoul City University) ;
  • Baik, Hion-Suck (CNRS 341, Bat.502, INSA de Lyon) ;
  • M. Troccaz (CNRS 341, Bat.502, INSA de Lyon) ;
  • D. Barbier (CNRS 341, Bat.502, INSA de Lyon)
  • Published : 1997.05.01

Abstract

The electrical properties of thick PZT films deposited on Ag-Pd/$Al_2O_3$ and Pt electrodes were carefully investigated according to the annealing methods and the sub-strates. For electrical properties measurements, silver was deposited on PZT films as top electrode. The crystallogaphic structure of the films was examined by standard X-ray diffraction method to determine which crystalline phase was present. Dielctric constant was measured at 1 kHz, 10 mV by using a HP4284A. The electrical properties of PZT films with 3 wt% PbO addition were not improved. It was also found that the Ag-Pd layer has a good possibility as electrode instead of Pt. It seems clear from the present experiments that the thick PZT films having the good electrical properties can certainly be obtained using spin on technique combined with rapid thermal annealing.

Ag-Pd/$Al_2O_3$와 Pt 기판에 스핀온 방법으로 제조된 PZT 후막의 열처리 방법에 따른 전기적 특성을 조사하였다. 전기적 특성을 측정하기 위하여 상부전극으로 은(Ag)을 PZT표면에 충착하였다. 이렇게 만들어진 PZT 후막의 결정구조는 X-ray로 조사하였으며, 유전상수는 HP4284A를 사용하여 1 KHz, 10 mV에서 측정하였다. 또한 유전계수는 Berlincourt 피에조메터를 사용하여 측정하였다. 그 결과 3 wt% PbO가 첨가된 PZT 후막의 전기적 특성은 오히려 감소하였으며, Ag-Pd 전극은 Pt 전극을 대체할 수 있는 가능성이 매우 높았다. 특히 스핀온 방법으로 제조된 PZT 후막을 급속열처리(RTA)를 함으로써 전기적 특성을 크게 향상시킬 수 있었다.

Keywords