이득 스위칭 반도체 레이저에서 동작 파라메터에 대한 출력 펄스 폭의 의존성

Dependence of pulse width on the operating parameters in a gain-switched semiconductor laser

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.