Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Raman scattering in porous silicon

다공질 규소의 라만 산란

  • Published : 1998.02.01
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Abstract

The Raman scattering was studied from the porous silicons which were made by changing anodization current. As the current density was increased, it was observed that Raman was gradually far from the value of 520.5 $\textrm{cm}^{-1}$ and the full width half maximum increased. The decrease of radius of cylindrical porous crystal was calculated and the increase of its length was investigated through AFM.

양극반응 전류밀도를 변화시키면서 다공질 규소를 제작하여 라만산란을 관측하였다. 전류밀도가 증가함에 따라 라만신호는 520.5$\textrm{cm}^{-1}$에서 멀어졌으며, 봉우리의 반치폭이 증가하였다. 또한 전류밀도 증가에 따라 원통형 다공질 결정의 직경은 감소함이 계산되었으며, 길이가 길어짐을 AFM으로 관찰하였다.

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