The Effective $P_2O_5$ Doping into $B_2O_3-P_2O_5-SiO_2$ Silica Layer Fabrication by Flame Hydrolysis Deposition

FHD법에 의한 $B_2O_3-P_2O_5-SiO_2$ 실리카막의 효과적인 $P_2O_5$ 도핑

  • 심재기 (한국전자통신연구원 통신부품연구실) ;
  • 이윤학 (한국전자통신연구원 통신부품연구실) ;
  • 성희경 (한국전자통신연구원 통신부품연구실) ;
  • 최태구 (한국전자통신연구원 통신부품연구실)
  • Published : 1998.04.01

Abstract

Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

광집적회로용 평면도파로를 구현하기 위한 $B_2O_3-P_2O_5-SiO_2$ 실리카 광도파막을 실리콘 기판위에 FDH(Flame Hydrolysis Depositon)법으로 제조하여 미립자의 미세구조, 실리카막의 굴절률과 조성을 고찰하였다. FHD법에서 도펀트(dopant)물질로, $B_1\;P_1\;Ge$ 등의 산화물이 사용되며, $B_1$ Ge 산화물의 경우 $SiO_2$와의 결합특성이 우수하여 비교적 도핑(doping)이 용이하지만 P의 경우 $P_2O_5$의 낮은 융점에 의한 증발 등으로 효과적인 도핑이 어렵다. 수직형 FHD 토치를 사용하고 화염온도, 기판온도, 토치와 기판간의 거리를 최적화하여 P 농도가 3.3 Wt%이상이고 고밀화 온도가 $1180^{\circ}C$ 이하인 양질의 실리카막을 얻었다. 실리카막의 굴절률은 $1.55\;\mu\textrm{m}$ 파장에서 $1.4480{\pm}1{\times}10^{-1}$로 측정되었으며, $22{\pm}1\;\mu\textrm{m}$의 두께를 보였다.

Keywords

References

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