The preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process

솔-젤법을 이용한 Bismuth Layered Structure를 가진 강유전성 박막의 제조 및 특성평가에 관한 연구

  • 주진경 (고려대학교 재료공학과) ;
  • 송석표 (고려대학교 재료공학과) ;
  • 김병호 (고려대학교 재료공학과)
  • Published : 1998.09.01

Abstract

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

Keywords

References

  1. MRS Bulletin,Electroceramic Thin Films Part II High Permittivity Perovskite Thin Films for Dynamic Random-Acess Memories A. I. Kingon;S. K. Streiffer;C. Basceri;S. R. Summerfelt
  2. J. Appl. Phys v.61 Preparation and Characteristics of Pyroelectric Infrared Sensors made of c-axis Oriented La-modified PbTiO₃ Thin Films R Takayama;Y. Tomita;K. Iijima;I. Ueda
  3. Mat. Res. Soc. Symp. Proc. v.433 Integration Aspects and Electrical Properties of SrBi₂Ta₂$O_9$ for Non-Volatile Memory Applications D. J. Taylor;R. E. Jones;Y. T. Lii;P. Zurcher;P. Y. Chu;S. J. Gillespie
  4. Intergrated Ferroelectrics v.15 A Critical Comparative review of PZT and SBT-Based Science and Techology for NonVolatile Ferroelectric Memories Orlando Auciello
  5. Jpn. J. Appl. Phys. v.68 Fatigue properties of ferroelectric PZT Thin Film and Their Charaterization H. M. Duiker;P. D Cuchiaro;L. D. McMillan
  6. Jpn. J. Appl. Phy v.32 Evaluation of imprint properties in Sol-Gel Ferroelectric Pb(Zr,Ti)O₃Thin-Film Capacitors T. Mihara;H. Watanabe;C. A. Paz de Araujo
  7. Nature v.374 Fatigue-Frce Ferroelectric Capacitors with Platinum Electrodes C. A-Paz de Araujo;J. D. Cuchiaro;L. D. McMillan;M. C. Scott;J. F. Scott
  8. Intergrated Ferroelectrics v.14 New Low Temperature Processing of Sol-Gel SrBi₂Ta₂$O_9$ Thin Films Yasuyuki Ito;Maho Ushikubo;Seiichi Yokoyama;Hironori Matsunaga
  9. Jpn. J. Appl. Phy. v.36 Preparation and Basic Properties of SrBi2-Ta2 $O_9$ Films Yoshihiro Oishi;Yoshihinori Matsumuro;Masanori Okuyama
  10. MRS Bulletin,Electroceramic Thin Films Part I Solution Deposition of Ferroelectric Thin Films B. A. Tuttle;R. W. Schwartz
  11. Jpn. J. Appl. Phys. v.35 Analysis of the Dependece of Ferroelectric Properties of Strontium and Process Temperature Takehiro Noguchi;Takashi Hase;Yoichi Miyasaka
  12. Intergrated Ferroelectrics v.14 Phase Formation and Characterization of the SrBi₂Ta₂$O_9$ Layered-Perovskite Ferroelectric Mark A. Rodriguez;Timothy J. Boyle;Catherine D. Buchheit;Raplh G. Tissot;Celeste A. Drewien;Bernadette A. Hernanez;Michael O. Eatough
  13. Jpn. J. Appl. Phys. v.36 Role of Excess Bi in SrBi²Ta₂$O_9$ Thin Film Prepared Using Chermical Liquid Deposition and Sol-Gel Method Ichiro Koiwa;Yukihksa Okada;Juro Mita;Akija Hashimiti;Yoshihiro Sawda
  14. Jpn. J. Appl. Phys. v.36 Preparation and Dielectric Properties of SrBi₂Ta₂O9 Thin Films by Sol-Gel Method Takashi Hayashi;Takuya Hara;Hiroshi Takahashi
  15. Mat. Res. Soc. Symp. Proc. v.433 The Evaluation of SrBi₂Ta₂$O_9$ Films For Ferroelectric Memories C.D.Gutleben