Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

The Effect of Bismuth Composition Controlled by Heat Treating Heterostructure on the Ferroelectric Properties of SrBi$_2$Ta$_{2-x}$Nb$_x$O$_9$ Thin Films

Heterostructure 열처리에 의한 Bi 조성 제어가 SrBi$_2$Ta$_{2-x}$Nb$_x$O$_9$ 박막의 강유전 특성에 미치는 영향

  • 박윤백 (한국과학기술연구원 박막기술연구센터) ;
  • 이전국 (한국과학기술연구원 박막기술연구센터) ;
  • 정형진 (한국과학기술연구원 박막기술연구센터) ;
  • 박종완 (한양대학교 금속공학과)
  • Published : 1998.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

Keywords

References

  1. J. Appl. Phys. v.80 no.3 Photoinduced Changes in the Fatigue Behavior of $SrBi_2Ta_2O_9\;and Pb\;(Zr,Ti)O_3$ Thin Films D. Dimos;H. N. Al-Shareef;W. L. Warten;B. A. Tuttle
  2. Jpn. J. Appl. Phys. v.33 Fatigue Characteristics of Seol-Gel Derived Pb(Zr,Ti)O₃ Thin Films Kazushi Amanuma;Takashi Hase;Yoichi Miyasaka
  3. Jpn. J. Appl. Phys. v.33 Fatigue and Refreshment of (Pb,La)TiO₃ Thin Films by Multiple Cathode Sputtering Hiroshi Maiwa;Noboru Ichinose;Kiyoshi Okazaki
  4. Mater. Sci. and Eng. v.B34 Fatigue-free $SrBi_2(Ta_xNb_{1-x})_2O_y$ Ferroelectric Thin Films Seshu B. Desu;Tingkai Li
  5. Mater. Sci. and Eng. v.B32 C-axis Oriented Ferroelectric $SrBi_2(Ta_xNb_{1-x})_2O_9$ Thin Films Seshu B. Desu;Dilip P. Vijay
  6. Nature v.374 Fatigue-free Ferroelectric Capacitors with Platinum Electrodes C. A-Paz de Araujo;J. D. Cuchiaro;L.D. Mcmiiian;M. C. Scott;J. F. Scott
  7. J. Phys. Chem. Solids v.23 A Family of Ferroelectric Bismuth Compounds E. C. Subbarao
  8. Jpn. J. Appl. Phys. v.36 Role of Excess Bi and $SrBi_2Ta_2O_9$ Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method Ichiro Koiwa;Yukihisa Okada;Juro Mita;Akira Hashimoto;Yshihiro Sawada
  9. Jpn. J. Appl. Phys. v.34 Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method Tsutomu Atsuki;Nobuyuki Soyama;Tadashi Yonnczawa;Katsumi Ogi
  10. J. Mater. Res. v.12 no.6 The Effect of Excess Bismuth on the Ferroelectric Properties of $SrBi_2Ta_2O_9$Thin Films Tze-Chiun Chen;Tingkai Li;Xubai Zhang;S. B. Desu
  11. J. Mater. Res. v.12 no.8 Structure Development Studies of $SrBi_2(Ta_{1-x}Nb_x)_2O_9$ Thin Films Tze-Chiun Chen;Tingkai Li;Xubai Zhang;S. B. Desu
  12. J. Vac. Sci. Technol. A. v.14 no.3 Electrical Characterization of $Pt/SrBi_2Ta_2O_9/Pt$ capacitors Fabricated by the Pulsed Laser Ablated Deposition Technique Jeon-Kook Lee;Hyung-Jin Jung;O. Auciello;A. I. Kingon
  13. Appl. Phys. Lett. v.67 no.4 Pulsed Laser Ablation Synthesis and Characterization of Layered $Pt/SrBi_2Ta_2O_9/Pt$ Ferroelectric Capacitors with Practically No Polarization Fatigue R. Dat;J.-K. Lee;O. Auciello;A. I. Kingon
  14. Intergrated Ferroelectrics v.15 Characteristics of $SrBi_2Ta_2O_9$ Thin Films Fabricated by The R.F. Magnetron Sputtering Technique J. K. Lee;T. K. Song;H. J. Jung
  15. J. Kor. Phys. Sci. Improvement on the Ferroelectric Properties by the Heat Treating $SrBi_2(Ta_{1-x}Nb_x)_2O_9/Bi_2O_3/SrBi_2(Ta_{1-x}Nb_x)_2O_9$ Heterostructure Yoon-Baek Park;Jeon-Kook Lee;Hyung-Jin Jung;Jong-Wan Park
  16. Int. Electron Devices. Meeting(IEDM'96) Crystalline-Buffer-Layer-Aided(CBL) Sputtering Technique for Mega-Bit Ferroelectric Memory Devices with $SrBi_2Ta_2O_9$ Capacitors Takeo Matsuki;Yoshihiro Hayashi;Takemitsu Kunio
  17. Appl. Phys. Lett. v.72 no.14 $Sr_{0.3}Bi_{2.5}Ta_{1.2}NB_{0.9}O_{9-x}$ Ferroelectric Thin Films Prepared by Two-target Off-axis Radio Frequency Magnetron Sputtering Huei-Mei Tsai;Pang Lin;Tseung-Yuen Tseng
  18. ISSCC Digest of Technical Papers Material Optimization of Bismuth Based Mixed Layered Superlattice Ferroelectrics for High Performance FeRAMs T. Sumi(et al.)
  19. J. Mater. Res. v.11 no.9 Formation of $SrBi_2Ta_2O_9$:Part Ⅱ. Evidence of a Bismuth-deficient Pyrochloie Phase Mark. A. Rodriguez;Timothy J. Boyle;Bernadette A. Hernandez;Catherine D. Budhheit;Michael O. Eatough
  20. Intergrated Ferroelectrics v.14 Phase Formation and Chracterization of the $SrBi_2Ta_2O_9$ Layered Perovskite Ferroelectric M. A. Rodriguez;T. J. Boyle;C. D. Buchheit;R. G. Tissot;C. A. Drewien;B. A. Hernandez;M. O. Eatough
  21. Jpn. J. Appl. Phys. v.35 Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate(SBT) Thin Films on the Composition and Process Temperature Takehiro Noguchi;Takeshi Hase;Yoichi Miyasaka
  22. Appl. Phys. Lett. v.72 no.11 Oxide Interfacial Phases and the Electrical Properties of $SrBi_2Ta_2O_9$Thin Films Prepared by Plasma-enhanced Metalorganic Chemical Vapor Deposition Nack-Jin Seong;Cheol-Hoon Yang;Woong-Chul Shin;Soon-Gil Yoon
  23. Smithells Metals Reference Book(7th Ed.) E. A. Brandes;G. B. Brook