The Effect of Bi Content on the C-axis Oriented Growth of $SrBi_2$$Ta_2$$O_9$ Thin Films Fabricateed by R.F. Magnetron Sputtering

R.F. 마그네트론 스퍼터링에 의한 제조된 $SrBi_2$$Ta_2$$O_9$ 박막의 C축 배향성장에 미치는 Bi양의 영향

  • 배철휘 (한국과학기술연구원 박막기술연구센터) ;
  • 이전국 (한국과학기술연구원 박막기술연구센터) ;
  • 이시형 (한국과학기술연구원 박막기술연구센) ;
  • 정형진 (한국과학기술연구원 박막기술연구센터)
  • Published : 1998.10.01

Abstract

We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

Keywords

References

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